Additive manufacturing for integrated circuit assembly cables

ABSTRACT

Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

TECHNICAL FIELD

Embodiments of the present description generally relate to the field ofintegrated circuit assembly or structure fabrication, and, morespecifically, to an integrated circuit assembly or structure includingat least one component fabricated with an additive process.

BACKGROUND

The world is experiencing ever more interconnection between integratedcircuit devices, which in turn results in significant increases theconsumption of data. With these increases, the demands on computerservers to supply this data increases. These demands include, but arenot limited to, increased date rates, advanced switching architecturesthat require longer interconnects, advanced power solutions, and thelike.

As will be understood to those skilled in the art, there may be avariety of signal and power interconnects within servers andhigh-performance computing architectures to operate individualcomponents and/or to electrically connect components therein. Theseinterconnects may include interconnects on multi-chip packages (MCPs),within-blade interconnects (e.g. socket-to-socket), within rackinterconnects (e.g. blade to blade), and rack-to-rack or rack-to-switchinterconnects. Currently, short interconnects (for example, within rackinterconnects and some rack-to-rack interconnects) are achieved withelectrical cables. Theses electrical cable may include ethernet cables,co-axial cables, twin-axial cables, and the like, depending on therequired data rate. For longer distances, optical solutions aregenerally employed due to the very long reach and high bandwidth enabledby fiber optic solutions. However, as new architectures emerge, such as100 Gigabit ethernet, traditional electrical connections are becomingincreasingly expensive and power demanding to support the required datarates. For example, to extend the reach of a cable or the givenbandwidth on a cable, higher quality cables may need to be used oradvanced equalization, modulation, and/or data correction techniquesemployed, which add power and latency to the system. For some distancesand data rates required in proposed architectures, there are currentlyno viable electrical solutions. Although optical solutions, such asoptical transmission over fiber, may be capable of supporting therequired data rates and distances, there is a severe power and costpenalty, especially for short to medium distances (e.g. a few meters).

Furthermore, components, such as integrated circuit packages, requirevery large number of system connections. These connections are neededfor power delivery since thermal design power of integrated circuitpackages can reach 100 s-1000 s of watts, which requires a very largenumber of power pins. Additionally, large number of high-speedinput/output (HSIO) connections, such as 16+ channel double data rate(DDR) and 128+ peripheral component interconnect express (PCIE) lanes,are needed to support the demand for higher bandwidth to system memoryand other accelerators. This leads to very complex and high cost largesockets to support the huge number of pins between the integratedcircuit package and the electronic substrate to which it is connected.Furthermore, the power and high-speed input/output signals need totravel through a relatively resistive and high parasitic path through arelatively large number of material layers from one side of theintegrated circuit package to the other and through socket pins. Thismay result in poor power efficiency and reduced high speed channel linkbudget. Thus, at least one cable, in addition to the socket, may beutilized to provide at least a portion of the power and high-speedinput/output signals.

Therefore, there is a need for cost effective and reliable cables, cableconnectors, and attachment structures that can support very high datarates.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter of the present disclosure is particularly pointed outand distinctly claimed in the concluding portion of the specification.The foregoing and other features of the present disclosure will becomemore fully apparent from the following description and appended claims,taken in conjunction with the accompanying drawings. It is understoodthat the accompanying drawings depict only several embodiments inaccordance with the present disclosure and are, therefore, not to beconsidered limiting of its scope. The disclosure will be described withadditional specificity and detail through use of the accompanyingdrawings, such that the advantages of the present disclosure can be morereadily ascertained, in which:

FIG. 1 is a side cross-sectional view of an electronic substrate,according to one embodiment of the present description.

FIG. 2 is a side cross-sectional view of a cable connector formed on theelectronic substrate of FIG. 1, according to an embodiment of thepresent description.

FIG. 3 is an isometric view of the cable connector of FIG. 2, accordingto an embodiment of the present description.

FIG. 4 is a side cross-sectional view of a cable connector formed on theelectronic substrate of FIG. 1, according to another embodiment of thepresent description.

FIG. 5 is a side cross-sectional view of a side cable connector formedon the electronic substrate of FIG. 1, according to one embodiment ofthe present description.

FIG. 6 is a side cross-sectional view of a side cable connector formedon the electronic substrate of FIG. 1, according to another embodimentof the present description.

FIGS. 7-10 are plan views of process of forming a side cable connector,according to one embodiment of the present description.

FIG. 11 is a side cross-sectional view of an integrated circuit packagehaving a cable connector, according to another embodiment of the presentdescription.

FIGS. 12-15 are isometric views of a process of fabricating a cable,according to an embodiment of the present description.

FIG. 16 is an isometric view of a cable fused to a side cable connector,according to an embodiment of the present description.

FIG. 17 is an isometric view of a cable connector, according to anembodiment of the present description.

FIG. 18 is a side cross-sectional view of an integrated assembly havingan additive support structure, according to an embodiment of the presentdescription.

FIG. 19 is a plan view of an integrated assembly having multipleadditive support structures, according to another embodiment of thepresent description.

FIGS. 20-23 are side cross-sectional views of integrated assembleshaving additive support structures, according to various embodiments ofthe present description.

FIG. 24 is a flow chart of a process of fabricating a cable connector ona substrate, according to an embodiment of the present description.

FIG. 25 is a flow chart of a process of fabricating an integratedcircuit assembly, according to another embodiment of the presentdescription.

FIG. 26 is an electronic system, according to one embodiment of thepresent description.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that show, by way of illustration, specificembodiments in which the claimed subject matter may be practiced. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the subject matter. It is to be understood thatthe various embodiments, although different, are not necessarilymutually exclusive. For example, a particular feature, structure, orcharacteristic described herein, in connection with one embodiment, maybe implemented within other embodiments without departing from thespirit and scope of the claimed subject matter. References within thisspecification to “one embodiment” or “an embodiment” mean that aparticular feature, structure, or characteristic described in connectionwith the embodiment is included in at least one implementationencompassed within the present description. Therefore, the use of thephrase “one embodiment” or “in an embodiment” does not necessarily referto the same embodiment. In addition, it is to be understood that thelocation or arrangement of individual elements within each disclosedembodiment may be modified without departing from the spirit and scopeof the claimed subject matter. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thesubject matter is defined only by the appended claims, appropriatelyinterpreted, along with the full range of equivalents to which theappended claims are entitled. In the drawings, like numerals refer tothe same or similar elements or functionality throughout the severalviews, and that elements depicted therein are not necessarily to scalewith one another, rather individual elements may be enlarged or reducedin order to more easily comprehend the elements in the context of thepresent description.

The terms “over”, “to”, “between” and “on” as used herein may refer to arelative position of one layer with respect to other layers. One layer“over” or “on” another layer or bonded “to” another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. One layer “between” layers may be directly incontact with the layers or may have one or more intervening layers.

The term “package” generally refers to a self-contained carrier of oneor more dice, where the dice are attached to the package substrate, andmay be encapsulated for protection, with integrated or wire-bondedinterconnects between the dice and leads, pins or bumps located on theexternal portions of the package substrate. The package may contain asingle die, or multiple dice, providing a specific function. The packageis usually mounted on a printed circuit board for interconnection withother packaged integrated circuits and discrete components, forming alarger circuit.

Here, the term “cored” generally refers to a substrate of an integratedcircuit package built upon a board, card or wafer comprising anon-flexible stiff material. Typically, a small printed circuit board isused as a core, upon which integrated circuit device and discretepassive components may be soldered. Typically, the core has viasextending from one side to the other, allowing circuitry on one side ofthe core to be coupled directly to circuitry on the opposite side of thecore. The core may also serve as a platform for building up layers ofconductors and dielectric materials.

Here, the term “coreless” generally refers to a substrate of anintegrated circuit package having no core. The lack of a core allows forhigher-density package architectures, as the through-vias haverelatively large dimensions and pitch compared to high-densityinterconnects.

Here, the term “land side”, if used herein, generally refers to the sideof the substrate of the integrated circuit package closest to the planeof attachment to a printed circuit board, motherboard, or other package.This is in contrast to the term “die side”, which is the side of thesubstrate of the integrated circuit package to which the die or dice areattached.

Here, the term “dielectric” generally refers to any number ofnon-electrically conductive materials that make up the structure of apackage substrate. For purposes of this disclosure, dielectric materialmay be incorporated into an integrated circuit package as layers oflaminate film or as a resin molded over integrated circuit dice mountedon the substrate.

Here, the term “metallization” generally refers to metal layers formedover and through the dielectric material of the package substrate. Themetal layers are generally patterned to form metal structures such astraces and bond pads. The metallization of a package substrate may beconfined to a single layer or in multiple layers separated by layers ofdielectric.

Here, the term “bond pad” generally refers to metallization structuresthat terminate integrated traces and vias in integrated circuit packagesand dies. The term “solder pad” may be occasionally substituted for“bond pad” and carries the same meaning.

Here, the term “solder bump” generally refers to a solder layer formedon a bond pad. The solder layer typically has a round shape, hence theterm “solder bump”.

Here, the term “substrate” generally refers to a planar platformcomprising dielectric and metallization structures. The substratemechanically supports and electrically couples one or more IC dies on asingle platform, with encapsulation of the one or more IC dies by amoldable dielectric material. The substrate generally comprises solderbumps as bonding interconnects on both sides. One side of the substrate,generally referred to as the “die side”, comprises solder bumps for chipor die bonding. The opposite side of the substrate, generally referredto as the “land side”, comprises solder bumps for bonding the package toa printed circuit board.

Here, the term “assembly” generally refers to a grouping of parts into asingle functional unit. The parts may be separate and are mechanicallyassembled into a functional unit, where the parts may be removable. Inanother instance, the parts may be permanently bonded together. In someinstances, the parts are integrated together.

Throughout the specification, and in the claims, the term “connected”means a direct connection, such as electrical, mechanical, or magneticconnection between the things that are connected, without anyintermediary devices.

The term “coupled” means a direct or indirect connection, such as adirect electrical, mechanical, magnetic or fluidic connection betweenthe things that are connected or an indirect connection, through one ormore passive or active intermediary devices.

The term “circuit” or “module” may refer to one or more passive and/oractive components that are arranged to cooperate with one another toprovide a desired function. The term “signal” may refer to at least onecurrent signal, voltage signal, magnetic signal, or data/clock signal.The meaning of “a,” “an,” and “the” include plural references. Themeaning of “in” includes “in” and “on.”

The vertical orientation is in the z-direction and it is understood thatrecitations of “top”, “bottom”, “above” and “below” refer to relativepositions in the z-dimension with the usual meaning. However, it isunderstood that embodiments are not necessarily limited to theorientations or configurations illustrated in the figure.

The terms “substantially,” “close,” “approximately,” “near,” and“about,” generally refer to being within +/−10% of a target value(unless specifically specified). Unless otherwise specified the use ofthe ordinal adjectives “first,” “second,” and “third,” etc., to describea common object, merely indicate that different instances of likeobjects to which are being referred and are not intended to imply thatthe objects so described must be in a given sequence, either temporally,spatially, in ranking or in any other manner.

For the purposes of the present disclosure, phrases “A and/or B” and “Aor B” mean (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

Views labeled “cross-sectional”, “profile” and “plan” correspond toorthogonal planes within a cartesian coordinate system. Thus,cross-sectional and profile views are taken in the x-z plane, and planviews are taken in the x-y plane. Typically, profile views in the x-zplane are cross-sectional views. Where appropriate, drawings are labeledwith axes to indicate the orientation of the figure.

Embodiments of the present description relate to the formation ofcables, cable connectors, and support structures for cantilever packageand/or cable attachment connects using additive processes, such as acoldspray technique, for integrated circuit assemblies. In oneembodiment, cable connectors may be additively fabricated directly on anelectronic substrate. In another embodiment, seam lines of cables and/orbetween cables and cable connectors may be additively fused. In afurther embodiment, integrated circuit assembly attachment and/or cableattachment support structures may be additively formed on an integratedcircuit assembly.

The embodiments of the present description utilize additive processes,such as high throughput additive manufacturing (“HTAM”). One such HTAMprocess is a “coldspray” process. As the coldspray process is known inthe art, it will not be illustrated, but rather merely discussed herein.With a coldspray process, solid powders of a desired material ormaterials to be deposited are accelerated in a carrier jet (e.g.compressed air or nitrogen) by passing the jet through a convergingdiverging nozzle. The jet exits the nozzle at a high velocity andreaches the underlying substrate or target, where the impact causes thesolid particles in the jet to plastically deform and bond or “fuse” tothe substrate. Subsequent layers of the material similarly adhere toeach underlying layer upon continued jet impact, producing fast buildup(e.g. layers that are a few hundred microns thick can be deposited overan area of about 100-1000 mm² in a few seconds). Moreover, unlikethermal spraying techniques, this approach does not require melting theparticles, thus protecting both the powders and the substrate fromexperiencing excessive processing temperatures. Because additivemanufacturing, such as coldspray, is used, it eliminates the need forusing lithography and the many steps associated with it (resistdeposition, exposure, resist development, and resist removal) that arecharacteristic of subtractive or semi-additive methods, such as plating,sputtering, and the like. Additionally, 3D topography can be easilycreated, if needed, as will be understood to those skilled in the art.Moreover, different materials can be combined in the feed powder andused to create hybrid features in one step. The term “additively fused”for the purposes of the present description is defined to mean thefusing a first material to a second material by impacting the firstmaterial with the second material to form a bond therebetween.

In one embodiment of the present description, an additive process, suchas a coldspray process, may be used to form cable connectors, such asmillimeter wave (mmWave) connectors, directly on electronic substrates.FIG. 1 illustrates an electronic substrate 110, which may be anyappropriate structure, including, but not limited to, an interposer, amotherboard, and the like. The electronic substrate 110 may have a firstsurface 112, an opposing second surface 114, and at least one side 116extending between the first surface 112 and the second surface 114. Theelectronic substrate 110 may comprise a plurality of dielectric materiallayers (illustrated as a first dielectric material layer 122, a seconddielectric material layer 124, and a third dielectric material layer126), which may include build-up films and/or solder resist layers, andmay be composed of an appropriate dielectric material, including, butnot limited to, bismaleimide triazine resin, fire retardant grade 4material, polyimide material, silica filled epoxy material, glassreinforced epoxy material, low temperature co-fired ceramic materials,and the like, as well as low-k and ultra low-k dielectrics (dielectricconstants less than about 3.6), including, but not limited to, carbondoped dielectrics, fluorine doped dielectrics, porous dielectrics,organic polymeric dielectrics, fluoropolymers, and the like.

The electronic substrate 110 may further include conductive routes or“metallization” 118 extending through the electronic substrate 110. Aswill be understood to those skilled in the art, the conductive routes118 may be a combination of conductive traces (shown as a first leveltrace 132, second level traces 134 ₁, 134 ₂, and 134 ₃, and third leveltraces 136 ₁ and 136 ₂) and conductive vias (shown as vias 142, 144,146, and 148) extending through the plurality of dielectric materiallayers. The fabrication of conductive traces and conductive vias arewell known in the art and are not described for purposes of clarity andconciseness. The conductive traces and the conductive vias may be madeof any appropriate conductive material, including but not limited to,metals, such as copper, silver, nickel, gold, and aluminum, alloysthereof, and the like. As will be understood to those skilled in theart, the electronic substrate 110 may be a cored substrate or a corelesssubstrate.

As shown in FIG. 2, the third level trace 136 ₁ may be connected toground (as well as the first level trace 132 and the second level traces134 ₁ and 134 ₂), and the third level trace 136 ₂ may be connected to asignal line. As shown in FIGS. 2 and 3, a cable connector 150 may befused directly to the third level trace 136 ₁, such as by an additiveprocess. As shown, the cable connector 150 may include an alignmenthousing 152, comprising a conductive material (such as a metal), and atleast one keying feature 154 formed in the alignment housing 152 and acable mating opening 156, wherein the third level trace 136 ₂ is exposedwithin the cable mating opening 156. As will be understood to thoseskilled in the art, the alignment housing 152 and at least one keyingfeature 154 orient a cable (not shown) in a z-direction and to mate itin the appropriate position within the cable mating opening 156.

It is understood that for mmWave application the third level trace 136 ₂may be connect to ground and the second level traces 134 ₃ may beconnected to a signal line may be formed along with the second leveltraces 134 ₁ and 134 ₂ directly below the third level trace 136 ₂, suchthat it wireless couples with the third level trace 136 ₂, as will beunderstood to those skilled in the art. For purposes of the presentdescription, the term “signal trace” includes traces directly connectedto a signal line, as well as grounded traces wirelessly coupled to atrace connected to a signal line.

In another embodiment of the present description, as shown in FIG. 4,the additive process can be fabricate a connector pin 158 on the thirdlevel trace 136 ₂ (i.e. signal line) to receive a socket (not shown) ina cable (not shown), as will be understood to those skilled in the art.Forming the connector pin 158 directly on a signal line trace (e.g. thethird level trace 136 ₂) of the electronic substrate 110 may ensure veryreliable and low resistance electrical contact therebetween.

In a further embodiment of the present description, as shown in FIG. 5,a side cable connector 160 may be fabricated directly on the third leveltrace 136 ₁ proximate the side 116 of the electronic substrate 110. Theside cable connector 160 may include an alignment housing 162, at leastone keying feature 164 formed in the alignment housing 162 and a cablemating opening 166. As will be understood to those skilled in the art,the alignment housing 162 and at least one keying feature 164 orient acable (not shown) in a x-direction and to mate it in the appropriateposition within the cable mating opening 166. In one embodiment, asshown in FIG. 5, the alignment housing 162 may be a single conductivematerial.

Although the cable connector 150 of FIGS. 2-4 and the side cableconnector 160 of FIG. 5 need to be conductive in order to be connectedto ground, such that a shielding layer of a cable (not shown) can begrounded, as will be subsequently described, they need not be entirelyconductive. Due to the skin effect, the cable connectors 150, 160 needonly to be conductive for a few micrometers (about 1-10 um) forfrequencies of operation within the mm-Wave range (i.e. larger than 30GHz) and for typical metallic material conductivity ranges (such ascopper, aluminum, silver, and the like). Thus, in another embodiment ofthe present description, as shown in FIG. 6, the alignment housing 162may be fabricated with a non-conductive core 172 coated with aconductive material coating 174. It is understood that the additiveprocess can be used to fabricate both the non-conductive core 172 andthe conductive material coating 174. In one embodiment of the presentdescription, the non-conductive core 172 may comprise a plasticmaterial. In another embodiment of the present description, theconductive material coating 174 may comprise a metal, such as copper,silver, nickel, gold, and aluminum, alloys thereof, and the like.

Currently, cable connectors are fabricated by costly computer numericalcontrol (CNC) milling of metal blanks. Furthermore, the groundcontinuity between the cable connector and the electronic substrate isachieved by mechanical contact. Using the embodiments of the presentdescription, the cable connectors 150, 160 are built up, such as bycoldspray, directly on the electronic substrate 110, so that groundcontinuity will be achieved by electrical contact, which may be superiorfrom both performance and electromagnetic interference reductionperspectives compared to mechanical contact.

It is understood that sacrificial materials may be used to fabricate thecable connectors 150, 160 along with any keying features (building up onor around the sacrificial material). The sacrificial materials to beused can be either rigid materials, such as a plastic (e.g. polyetherether ketone, liquid-crystal polymer, or the like) or materials that canbe reactively removed, such as with heat or chemicals, after thefabrication of the cable connectors 150, 160. Furthermore, it isunderstood that the cable mating openings 156, 166 can be subsequentlyfilled with dielectric materials, if needed. In other words, they do notneed to be “filled with air” as shown in FIG. 2-6.

FIGS. 7-10 illustrate top plan views of a method of the fabrication of aside cable connector 180, according to one embodiment of the presentdescription. As shown in FIG. 7, the electronic substrate 110 may beformed having a ground trace 182 (such as the third level trace 136 ₂ ofFIGS. 1-6) and a plurality of signal traces 184 (such as the third leveltrace 136 ₁ of FIGS. 1-6) on a dielectric material layer 186 (such asthe third dielectric material layer 126 of FIGS. 1-6) proximate the edge116 of the electronic substrate 110. As shown in FIG. 8, a connector pin188 (such as the connector pin 158 of FIG. 4) may be formed on each ofthe signal traces 184. In one embodiment, the connector pins 188 may beelevated in a y-direction perpendicular to the figure and do notnecessary electrically contact the ground trace 182. In anotherembodiment, the signal traces 184 may be connect to ground (such aselectrically connected to ground trace 182) and an internal signaltraces (not shown) may be formed directly below the signal traces 184,such that they wireless couple with the signal traces 184, as will beunderstood to those skilled in the art.

As shown in FIG. 9, a cable 190 comprising a plurality of wires 192wrapped by, but isolated from, a shielding layer 194, may be positionsuch that each wire 192 contacts an associated connector pin 188. Asshown in FIG. 10, a cable connector 196 may be formed on the groundtrace 182 and be in electrical contact therewith, wherein the cableconnector 196 extends over the cable 190, such that the shielding layer194 electrically contacts the cable connector 196. This method offabrication may have advantages including, but not limited to, improvedreliability and low ohmic contact between electrically connectedcomponents, as well as improved mechanical rigidity and strain reliefpoints.

It is understood that although a single cable 190 is illustrated,multiple lanes/cables/waveguides may be configured and connected. It isfurther understood that although a “cable connection” is shown, theembodiments of the present invention can be translated for a socket orparts of a socket.

The embodiments of the present description, as shown in FIGS. 1-10, maybe incorporated into an integrated circuit assembly. FIG. 11 illustratesan integrated circuit assembly 100 having at least one integratedcircuit device 220 electrically attached to the electronic substrate 110(such as shown in FIGS. 1-10) in a configuration generally known as aflip-chip or controlled collapse chip connection (“C4”) configuration,according to an embodiment of the present description. A connector 210,such as the cable connector 150 of FIGS. 2-4 or the side cable connector160 of FIG. 5-6, may be electrically attached to the electronicsubstrate 110, as previously discussed, and a cable 212 electricallyattached thereto.

The integrated circuit device 220 may be any appropriate device,including, but not limited to, a microprocessor, a chipset, a graphicsdevice, a wireless device, a memory device, an application specificintegrated circuit, a transceiver device, an input/output device,combinations thereof, stacks thereof, and the like. As shown in FIG. 11,the at least one integrated circuit device 220 have a first surface 222and an opposing second surface 224. The at least one integrated circuitdevice 220 may be electrically attached to the electronic substrate 110with a plurality of device-to-substrate interconnects 242 extendingbetween bond pads 246 on the first surface 112 of the electronicsubstrate 110 and bond pads 244 on the first surface 222 of theintegrated circuit device 220. The device-to-substrate interconnects 242may be any appropriate electrically conductive material or structure,including, but not limited to, solder balls, metal bumps or pillars,metal filled epoxies, or a combination thereof. In one embodiment, thedevice-to-substrate interconnects 242 may be solder balls formed fromtin, lead/tin alloys (for example, 63% tin/37% lead solder), and hightin content alloys (e.g. 90% or more tin—such as tin/bismuth, eutectictin/silver, ternary tin/silver/copper, eutectic tin/copper, and similaralloys). In another embodiment, the device-to-substrate interconnects242 may be copper bumps or pillars. In a further embodiment, thedevice-to-substrate interconnects 242 may be metal bumps or pillarscoated with a solder material.

The bond pads 244 on the first surface 222 of the integrated circuitdevice 220 may be in electrical communication with integrated circuitry(not shown) within the integrated circuit device 220. The bond pads 246on the first surface 112 of the electronic substrate 110 may be inelectrical contact with the conductive routes 118 (shown in dashedlines) extending through the electronic substrate 110. As previouslydiscussed, the conductive routes 118 may be a combination of conductivetraces (see FIG. 1) and conductive vias (see FIG. 1) extending throughthe plurality of dielectric material layers (see FIG. 1).

As further shown in FIG. 1, an electrically-insulating underfillmaterial 252 may be disposed between the integrated circuit device 220and the electronic substrate 110, which substantially encapsulates thedevice-to-substrate interconnects 242. The underfill material 252 may beused to reduce mechanical stress issues that can arise from thermalexpansion mismatch between the electronic substrate 110 and theintegrated circuit device 220. The underfill material 252 may be anepoxy material, including, but not limited to epoxy, cyanoester,silicone, siloxane and phenolic based resins, that has sufficiently lowviscosity to be wicked between the integrated circuit device 220 and theelectronic substrate 110 by capillary action when introduced by anunderfill material dispenser (not shown), which will be understood tothose skilled in the art. The underfill material 252 may be subsequentlycured (hardened), such as by heat or radiation.

The second surface 224 of the integrated circuit device 220 may be inthermal contact with a heat dissipation device 260 through a thermalinterface material 270. In one embodiment of the present description,the heat dissipation device 260 may comprise a main body 262, having athermal contact surface 264 and an opposing surface 266, and at leastone boundary wall and foot 268 extending from the thermal contactsurface 264 of the main body 262 of the heat dissipation device 260. Theat least one boundary wall and foot 268 may be attached or sealed to thefirst surface 112 of the electronic substrate 110 with an attachmentadhesive or sealant layer (not shown). The heat dissipation device 260may be made of any appropriate thermally conductive material, including,but not limited to, at least one metal material and alloys of more thanone metal, or highly doped glass or highly conductive ceramic material,such as aluminum nitride. In a specific embodiment of the presentdescription, the heat dissipation device 260 may comprise copper,nickel, aluminum, alloys thereof, laminated metals including coatedmaterials (such as nickel coated copper), and the like.

The heat dissipation device 260 may have additional thermal managementdevices (not shown) attached thereto (such as to the surface 266) forenhanced heat removal. Such additional thermal management devices (notshown) may include, but are not limited to, heat pipes, high surfacearea dissipation structures with a fan (such as a structure having finsor pillars/columns formed in a thermally conductive structure), liquidcooling devices, and the like, as will be understood to those skilled inthe art.

In various embodiments of the present description, the thermal interfacematerial 270 may be any appropriate, thermally conductive material,including, but not limited to, a thermal grease, a thermal gap pad, apolymer, an epoxy filled with high thermal conductivity fillers, such asmetal particles or silicon particles, and the like.

As shown in FIG. 11, the conductive routes 118 may extend through theelectronic substrate 110 and be attached to bond pads 248 on the secondsurface 114 of the electronic substrate 110. As will be understood tothose skilled in the art, the electronic substrate 110 may reroute afine pitch (center-to-center distance between the bond pads) of the bondpads 242 on the first surface 112 of the electronic substrate 110 to arelatively wider pitch of the bond pads 248 on the second surface 114 ofthe electronic substrate 110. The electronic substrate 110 may beelectrically attached to an electronic board 280 through a plurality ofsubstrate-to-substrate interconnects 250 extending between the bond pads248 on the second surface 114 of the electronic substrate 110 and aplurality of bond pads 284 on a first surface 282 of the electronicboard 280. The substrate-to-substrate interconnects 250 may be anyappropriate electrically conductive component. In one embodiment, asshown, the substrate-to-substrate interconnects 250 may be resilientsocket pins. It is noted that sockets are well known in the art, and forthe sake of conciseness and clarity, will not be illustrated ordiscussed herein.

The electronic board 280 may be any appropriate structure, including,but not limited to, a motherboard. The electronic board 280 may comprisea plurality of dielectric material layers (not shown) and may furtherinclude conductive routes 288 or “metallization” (shown in dashed lines)extending through the electronic board 280. As will be understood tothose skilled in the art, the conductive routes 288 may be a combinationof conductive traces (not shown) and conductive vias (not shown)extending through the plurality of dielectric material layers (notshown). These conductive traces and conductive vias are well known inthe art and are not shown in FIG. 11 for purposes of clarity. As furthershown in FIG. 11, an electrically-insulating underfill material 254 maybe disposed between the electronic substrate 110 and the electronicboard 280, which substantially encapsulates the substrate-to-substrateinterconnects 250.

Further embodiments of the present may relate to a ‘welding” process forthe improvement of cables, cable-to-connectors connections, andconnectors component connection using a high throughput additivemanufacturing processes. The term “weld” and “welding” for the purposesof the present description are defined to mean the fusing of at leasttwo components and/or the fusing of two edges of a single component withmaterial formed by an additive process, such as a coldspray process,which forms an additive weld.

FIGS. 12-15 illustrate the use of an additive process to form a cable300. As shown in FIG. 12, a cable core 310 may be formed having a lengthL along a direction of signal transmission. The cable core 310 maygenerical represent any internal structure for the cable 300 (see FIG.15), such as a waveguide for a mmWave waveguide, or conductive wire(s)and an insulator material for a co-axial or twin-axial cable, as will beunderstood to those skilled in the art. In one embodiment, the cablecore 310 may comprise a polymer, including, but not limited to,fluoropolymers (such as polyfluoroalkyl, polytetrafluoroethylene,fluorinated ethylene propylene, and the like), polyethylenes, cyclicolefin polymers or co-polymers, and the like.

As shown in FIG. 13, a shielding layer 312 may be applied tosubstantially surround the cable core 310. In one embodiment of thepresent description, the shielding layer 312 may be a conductive foilwrap, wherein the application of the shielding layer 312 may result in aseam line 314 extending along the length L (see FIG. 12) of the cablecore 310. The seam line 314 may be the result of two opposing edges E1and E2 of the shielding layer 312 being adjacent one another when theshielding layer 312 is applied to the cable core 310. The shieldinglayer 312 may be made of any appropriate conductive material, including,but not limited to, metals. In one embodiment, the shielding layer 312may be a conductive foil comprising copper, silver, nickel, gold, andaluminum, alloys thereof, and the like. In another embodiment, theshielding layer 312 may be a conductive foil comprising copper, silver,nickel, gold, and aluminum, alloys thereof, and the like, with a polymerfilm backing, such as a polyimide or the like.

As shown in FIG. 14, the two opposing ends E1 and E2 of the shieldinglayer 312 may be fused together with an additive weld 316. In anembodiment, the additive weld 316 may be formed with a coldsprayprocess. In one embodiment, the additive weld 316 may comprise a metal,such as copper, silver, nickel, gold, and aluminum, alloys thereof, andthe like. It is, of course, understood that the conductive foil 312 mayoverlap such that the seam line 314 is formed at the point that one ofthe opposing edges E1 and E2 overlaps the shielding layer 312.

As shown in FIG. 15, a coating layer 318 may be formed over theshielding layer 312. In one embodiment, the coating layer 318 may be aheat-shrink tubing, such as a polyolefin or a polyethylene terephthalatefilm. In previous cables without an additive weld 316, a polyethyleneterephthalate helical wrap was used to keep the shielding layer 312 inplace, which imprinted wrinkles into the shielding layer 312 and, inturn, creates a transmission bandgap. The present embodiment eliminatesthis issue.

In another embodiment of the present description, the additive weld 316,as described in FIG. 14, may be utilized on various interfaces betweencomponents of an interconnect system to be assembled together. As willbe understood to those skilled in the art, components of an interconnectsystem need to be conductive. Of course, due to the skin effect, thesecomponents need to only be conductive for a few micrometers (1-10 um)beyond a surface thereof. Thus, as previously discussed, the componentsmay comprise non-conductive parts, such as plastics, that can be coatedwith a conductive material, such as by an additive process. Currently,these components are assembled together and ground continuity isachieved by mechanical contact. By using the additive weld 316, asdescribed in FIG. 14, the ground continuity may be achieved byelectrical contact, thereby achieving better performance, as will beunderstood to those skilled in the art. In specific, the use of theadditive weld 316 may provide additional mechanical rigidity and stressrelief points at a seam between components. Additionally, the use of theadditive weld 316 may lead to higher performance due to a lowerresistivity and a lower insertion loss (particularly with regard to acable-connector assembly). Furthermore, the continuous shieldingachieved by the use of the additive weld 316 may lead to increasedelectromagnetic interference shielding, lower cable insertion loss, lessleakage, and higher grounding effectiveness.

As shown in FIG. 16, the shielding layer 312 of the cable 300 (see FIG.15) may be fused with the additive weld 316 to a cable connector 320,such as described with regard to the embodiments of FIGS. 1-11,incorporated herein by reference. As illustrated in FIG. 16, a seam line314 (dashed line) is formed where the shielding layer 312 abuts thecable connector 320 and the additive weld 316 spans the seam line 314.

As shown in FIG. 17, a connector 330, shown as a 90-degree waveguideconnector, may comprise a plurality of stacked components (i.e. firstcomponent 332, second component 334, and third component 336). Asillustrated, the interfaces between adjacent components form a firstseam line 342 (dashed line) between the first component 322 and thesecond component 334, and a second seam line 344 (dashed line) betweenthe second component 334 and the third component 336, wherein the firstcomponent 322 and the second component 334 are fused with a firstadditive weld 352, and the second component 334 and the third component336 are fused with a second additive weld 354. It is noted that thefirst additive weld 352 may also fuse a first cable 362 and a secondcable 364 to the first component 332 and the second component 334, andthat the second additive weld 354 may also fuse a third cable 366 and afourth cable 368 to the second component 334 and the third component336.

It is understood that the embodiments illustrated in FIGS. 12-17 can beincorporated into the integrated circuit assembly 100 of FIG. 11.

As previously discussed, components, such as integrated circuitpackages, require a very large number of system connections. Theseconnections are needed for power delivery since thermal design power ofintegrated circuit packages can reach 100 s-1000 s of watts, whichrequires a very large number of power pins. Additionally, a large numberof high-speed input/output (HSIO) connections, such as 16+ channeldouble data rate (DDR) and 128+ peripheral component interconnectexpress (PCIE) lanes, are needed to support the demand for higherbandwidth to system memory and other accelerators. This leads to verycomplex and high cost large sockets to support the huge number of pinsbetween the integrated circuit package and the electronic substrate towhich it is connected. Furthermore, the power and high-speedinput/output signals need to travel through a relatively resistive andhigh parasitic path through a relatively large number of material layersfrom one side of the integrated circuit package to the other. This mayresult in poor power efficiency and reduced high speed channel linkbudget. Thus, at least one cable, in addition to the socket, may beutilized to provide at least a portion of the power and high-speedinput/output signals.

In one embodiment of the present description, at least one side mountmodule may be formed on the side of an integrated circuit package inorder to support side connectivity to the package. In an embodimentillustrated in FIG. 18, the integrated circuit assembly 100 of FIG. 11may have a side mount module 410 rather than the cable connector 210 andthe cable 212. The side mount module 410 may comprises a side mountconnector 420 (illustrated as a sub-socket) and a side mount bridge 430.A first surface 422 of a side mount connector 420 may be electricallyattached to the first surface 282 of the electronic board 280. A secondsurface 424, which opposes the first surface 422 may be electricallyattached to a first surface 432 of the side mount bridge 430 through atleast one connector-to-bridge interconnect 442. In an embodiment, theconnector-to-bridge interconnects 442 may be resilient socket pins, asillustrated. The first surface 432 of the side mount bridge 430 may alsobe electrically attached to the first surface 112 of the electronicsubstrate 110 with bridge-to-substrate interconnects 444, such as solderballs. The side mount bridge 430 may be any appropriate device, such asa voltage regulator, a high-speed input/output device, a mmWave module,a passive printed circuit board signal router, and the like.

The electrical attachment of the side mount bridge 430 to the electronicsubstrate 110 may result in a weak structure and can create a largemoment at the bridge-to-substrate interconnects 444, especially ifrelatively high contact force is needed when the connector-to-bridgeinterconnects 442 are resilient socket pins. Although the side mountbridge 430 could potentially strengthen the structure using polymers orother glue-type materials, these materials are still relatively weak,have limitations on lifetime reliability especially with thermal cyclingand constant mechanical loading, and may also impact the thermalperformance of the heat dissipation device 260. In one embodiment of thepresent description, a material may be deposited using a high throughputadditive manufacturing process, such as cold spraying as previouslydiscussed, to fuse the side mount bridge 430 to the heat dissipationdevice 260 forming an additive support structure 450. This embodimentmay provide a strong mechanical connection between the side mount bridge430 and the heat dissipation device 260, and may improve the thermalspreading performance of the heat dissipation device 260. In oneembodiment of the present invention, the additive support structure 450may be made of a high thermal conductive material, including, but notlimited to, metals (such as copper, silver, aluminum, alloys thereof,and the like), non-metals (such as diamond, silicon carbide, boronnitride, aluminum nitride), and any combinations of metal and non-metalmaterials. As shown, the additive support structure 450 may extend overa second surface 434 of the side mount bridge 430.

In one embodiment, the substrate-to-substrate interconnects 250 may beused for standard signal connection, while the side mount module 410 maybe used for specialty connections or be customized based on the systemconnectivity and power requirements. For example, the side mount module410 may support ultra-low resistance contacts, or ultra-high frequencyconnections, such as mmWave or optical connections.

The additive support structure 450 may have any appropriateconfiguration, as shown in FIG. 19, the additive support structure 450may connect from at least a portion of the at least one boundary walland foot 268 to reinforced points 452 within the side mount module 410,such as screws that connect to a backplate (not shown) or thick platedthrough hole vias (not shown). Additionally, more than one side mountmodule may be attached to the electronic substrate 110. As illustratedin FIG. 19, a second side mount module 460 having a second heatdissipation device 462 may be electrically attached to the electronicsubstrate 110, wherein an additive support structure 464 may connect theheat dissipation device 260 to the second heat dissipation device 462.Although the embodiments are shown with the additive support structure450 proximate the first surface 112 of the electronic interposer 110, itis understood that an additional additive support structure (not shown)may be formed proximate the second surface 114 of the electronicinterposer 110.

As shown in FIG. 20, a load (arrow 470) is generally applied to theintegrated circuit assembly 100 when a socket is used to electricallyattached the electronic interposer 110 to the electronic board 280. Asillustrated, a load mechanism 472 having a plurality of springs 474,476, and 478 may be used. The springs 474, 476, 478 may be of differingtypes or materials to tune the applied force for the heat dissipationdevice 260 (springs 474 and 476) and the side mount module 410 (spring478) depending on the requirements for each.

As shown in FIG. 21, the side mount module 410 may be used to providehigh frequency connections. In this embodiment, the side mount module410 need not be electrically connected to the electronic board 280,rather, as shown, the side mount connector 420 (illustrated as awaveguide connector) may be attached by the first surface 422 thereof tothe first surface 282 of the electronic board 280 by an adhesivematerial layer 448. In one embodiment, the adhesive material layer 448may comprise a compressible/resilient material. A data cable 460(illustrated as waveguide bundle) may be attached to the side mountconnector 420 (i.e. waveguide connector) at one side 426 thereof,wherein the side mount connector 420 routes signals to the secondsurface 424 thereof. The side mount bridge 420 (see FIG. 18) maycomprise a waveguide substrate 482 and at least one waveguide processor484 attached to a waveguide substrate 482. The waveguide substrate 482may be attached to the side mount connector 420 and the first surface112 of the electronic substrate 110.

As shown in FIG. 22, the side mount module 410 may be used as a passive,high-speed signal routing structure to support high frequency channels,such as additional peripheral component interconnect express (PCIE)lanes or double data rate (DDR) channels depending on specific serverrequirements. In this embodiment, the side mount connector 420 may be ahigh-speed connector and the side mount bridge 430 may be a passivefan-out board or package. The side mount connector 420 may be attachedby the first surface 422 thereof to the first surface 282 of theelectronic board 280 by the adhesive material layer 448. A data cable480 may be attached to the side mount connector 420 at one side 426thereof, wherein the side mount connector 420 routes signals to thesecond surface 424 thereof. The side mount bridge 430 (i.e. passivefan-out board or package) may be attached to the second surface 424 ofthe side mount connector 420 and the first surface 112 of the electronicsubstrate 110. As will be understood to those skilled in the art, theside mount bridge 430 (i.e. passive fan-out board or package) maytranslate the relatively wide pitch of the connector-to-bridgeinterconnects 442 to a relatively narrow pitch of thebridge-to-substrate interconnects 444.

As shown in FIG. 23, the side mount module 410 may be used support aflex cable with an active multiplexing module or a passive passthroughcomponent. This embodiment may be needed in extremely large integratedcircuit packages where the force 470 (see FIG. 20) needed for attachment(e.g. for a main socket) exceeds the strength of the electronic board280 or a backplate (not shown) supporting the electronic board 280, orwhere require expensive components are required to overcome this issue.This embodiment may allow for splitting off some input/output signalsfrom the loading force 270 (see FIG. 20) needed. In this embodiment, theside mount connector 420, such as an active multiplexing module or apassive passthrough component, may be attached by the first surface 422thereof to the first surface 282 of the electronic board 280 by theadhesive material layer 448. The data cable 460 may be attached to theside mount connector 420 at one side 426 thereof, wherein the side mountconnector 420 routes signals to the side mount bridge 430, which, inthis embodiment, may be a passive rigid flex board 490 having a firstportion 492 inserted into the side mount connector 420 and an opposingsecond portion 494 attached by bridge-to-substrate interconnects 446 tothe first surface 112 of the electrical substrate 110.

FIG. 24 is a flow chart of a process 500 of fabricating a cableconnector on an electronic substrate according to an embodiment of thepresent description. As set forth in block 510, a dielectric materiallayer may be formed. A ground trace may be formed on the dielectricmaterial layer, as set forth in block 520. As set forth in block 530, asignal trace may be formed on the dielectric material layer. A cableconnector may be formed comprising an alignment housing additively fusedto the ground trace, wherein the alignment housing includes a cablemating opening and wherein the signal trace is within the cable matingopening, as set forth in block 540.

FIG. 25 is a flow chart of a process 600 of fabricating an integratedcircuit assembly according to an embodiment of the present description.As set forth in block 612, an electronic board may be formed. Anelectronic substrate having a first surface and an opposing secondsurface may be formed, as set forth in block 614. As set forth in block616, the second surface of the electronic substrate may be electricallycontacted with electronic board. An integrated circuit device may beformed having a first surface and an opposing second surface, as setforth in block 618. As set forth in block 620, the first surface of theintegrated circuit device may be electrically attached to the firstsurface of the electronic substrate. A heat dissipation device may bemay be formed, as set forth in block 622. As set forth in block 624, theheat dissipation device may be thermally contacted with the secondsurface of the integrated circuit device. A side mount module comprisinga side mount connector and a side mount bridge may be form, as set forthin block 626. As set forth in block 628, the side mount connector may beattached to the electronic board. The side mount bridge may beelectrically attached to the side mount connector and the first surfaceof the electronic substrate, as set forth in block 630. As set forth inblock 632, an additive support structure may be formed to extend betweenand be fused to the heat dissipation device and the side mount module.

FIG. 26 illustrates an electronic or computing device 700 in accordancewith one implementation of the present description. The computing device700 may include a housing 701 having a board 702 disposed therein. Thecomputing device 700 may include a number of integrated circuitcomponents, including but not limited to a processor 704, at least onecommunication chip 706A, 706B, volatile memory 708 (e.g., DRAM),non-volatile memory 710 (e.g., ROM), flash memory 712, a graphicsprocessor or CPU 714, a digital signal processor (not shown), a cryptoprocessor (not shown), a chipset 716, an antenna, a display (touchscreendisplay), a touchscreen controller, a battery, an audio codec (notshown), a video codec (not shown), a power amplifier (AMP), a globalpositioning system (GPS) device, a compass, an accelerometer (notshown), a gyroscope (not shown), a speaker, a camera, and a mass storagedevice (not shown) (such as hard disk drive, compact disk (CD), digitalversatile disk (DVD), and so forth). Any of the integrated circuitcomponents may be physically and electrically coupled to the board 702.In some implementations, at least one of the integrated circuitcomponents may be a part of the processor 704.

The communication chip enables wireless communications for the transferof data to and from the computing device. The term “wireless” and itsderivatives may be used to describe circuits, devices, systems, methods,techniques, communications channels, etc., that may communicate datathrough the use of modulated electromagnetic radiation through anon-solid medium. The term does not imply that the associated devices donot contain any wires, although in some embodiments they might not. Thecommunication chip may implement any of a number of wireless standardsor protocols, including but not limited to Wi-Fi (IEEE 802.11 family),WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE),Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT,Bluetooth, derivatives thereof, as well as any other wireless protocolsthat are designated as 3G, 4G, 5G, and beyond. The computing device mayinclude a plurality of communication chips. For instance, a firstcommunication chip may be dedicated to shorter range wirelesscommunications such as Wi-Fi and Bluetooth and a second communicationchip may be dedicated to longer range wireless communications such asGPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

The term “processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory.

At least one of the integrated circuit components may include any of theembodiments of the present description.

In various implementations, the computing device may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra-mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice may be any other electronic device that processes data.

It is understood that the subject matter of the present description isnot necessarily limited to specific applications illustrated in FIGS.1-26. The subject matter may be applied to other integrated circuitdevices and assembly applications, as well as any appropriate electronicapplication, as will be understood to those skilled in the art.

The following examples pertain to further embodiments and specifics inthe examples may be used anywhere in one or more embodiments, whereinExample 1 is an integrated circuit assembly comprising a dielectricmaterial layer, a ground trace on the dielectric material layer, asignal trace on the dielectric material layer; and a cable connectorcomprising an alignment housing additively fused to the ground trace,wherein the alignment housing includes a cable mating opening andwherein the signal trace is within the cable mating opening.

In Example 2, the subject matter of Example 1 can optionally include aconnective pin additively fused to the signal trace.

In Example 3, the subject matter of any of Examples 1 to 2 canoptionally include the cable connector comprising a single conductivematerial.

In Example 4, the subject matter of any of Examples 1 to 2 canoptionally include the cable connector comprising non-conductive coreand a conductive material coating.

In Example 5, the subject matter of Example 4 can optionally include theconductive material coating being additively fused to the ground trace.

In Example 6, the subject matter of any of Examples 1 to 5 canoptionally include the alignment housing including a keying feature.

Example 7 is an integrated circuit assembly comprising an electronicsubstrate having a first surface and an opposing second surface, whereinthe electronic substrate includes at least one dielectric materiallayer, at least one ground trace on the dielectric material layer, andat least one signal trace on the dielectric material layer; a cableconnector comprising an alignment housing additively fused to the groundtrace, wherein the alignment housing includes a cable mating opening andwherein the signal trace is within the cable mating opening; a cablewithin the cable mating opening of the cable connector and electricallyconnected to the electronic substrate; and an integrated circuit deviceelectrically attached to a first surface of the electronic substrate,wherein the cable is electrically connected to the integrated circuitdevice through the electronic substrate.

In Example 8, the subject matter of Example 7 can optionally include aconnective pin additively fused to the signal trace.

In Example 9, the subject matter of any of Examples 7 to 8 canoptionally include the cable connector comprising a single conductivematerial.

In Example 10, the subject matter of any of Examples 7 to 8 canoptionally include the cable connector comprising non-conductive coreand a conductive material coating.

In Example 11, the subject matter of Example 10 can optionally includethe conductive material coating being additively fused to the groundtrace.

In Example 12, the subject matter of any of Examples 7 to 11 canoptionally include an electronic board, wherein the second surface ofthe electronic substrate is electrically attached to the electronicboard.

In Example 13, the subject matter of any of Examples 7 to 12 canoptionally include the alignment housing including a keying feature.

Example 14 is method of fabricating an integrated circuit assemblycomprising forming a dielectric material layer, forming a ground traceon the dielectric material layer, forming a signal trace on thedielectric material layer, and forming a cable connector comprising analignment housing additively fused to the ground trace, wherein thealignment housing includes a cable mating opening and wherein the signaltrace is within the cable mating opening.

In Example 15, the subject matter of Example 14 can optionally includeforming a connective pin additively fused to the signal trace.

In Example 16, the subject matter of Example 15 can optionally includeforming a cable including at least one wire and a shielding layer;electrically attaching at least one wire of the cable to the connectivepin, and forming the alignment housing over the at least one wire andconnective pin, wherein the alignment housing electrically contacts theshielding layer of the cable.

In Example 17, the subject matter of any of Examples 14 to 16 canoptionally include forming the cable connector from a single conductivematerial.

In Example 18, the subject matter of any of Examples 14 to 16 canoptionally include forming the cable connector comprising forming anon-conductive core and forming a conductive material coating on thenon-conductive core.

In Example 19, the subject matter of any of Examples 14 to 18 canoptionally include additively fusing the conductive material coating tothe ground trace.

In Example 20, the subject matter of any of Examples 14 to 19 canoptionally include the alignment housing including a keying feature.

Example 21 is a cable comprising a cable core, a shielding layersubstantially surrounding the cable core, a seam line defined by theshielding layer extending along a length of cable core, and an additiveweld spanning the seam line.

In Example 22, the subject matter of Example 21 can optionally includethe seam line being defined by a first edge of the shielding layeradjacent a second edge of the shielding layer.

In Example 23, the subject matter of any of Examples 21 to 22 canoptionally include the shielding layer comprising a metal.

In Example 24, the subject matter of any of Examples 21 to 23 canoptionally include the shielding layer comprising a conductive foil.

In Example 25, the subject matter of any of Examples 21 to 24 canoptionally include the shielding layer comprising a conductive foil witha polymer film backing.

In Example 26, the subject matter of any of Examples 21 to 25 canoptionally include the additive weld comprising a metal.

In Example 27, the subject matter of any of Examples 21 to 26 canoptionally include a coating layer over the shielding layer and theadditive weld.

In Example 28, the subject matter of any of Examples 21 to 27 canoptionally include the coating layer comprises a heat-shrink tube.

In Example 29, the subject matter of Example 28 can optionally includethe heat-shrink tube comprises polyolefin.

In Example 30, the subject matter of any of Examples 21 to 29 canoptionally include the cable core comprising a waveguide.

In Example 31, the subject matter of any of Examples 21 to 29 canoptionally include the cable core comprising at least one conductivewire and an insulator material.

Example 32 is an integrated circuit assembly comprising an electronicsubstrate, a cable connector electrically attached to the electronicsubstrate, a cable attached to the cable connector, wherein the cablecomprises a cable core and a shielding layer substantially surroundingthe cable core, and wherein the shielding layer is adjacent the cableconnector with a seam line defined between the shielding layer and thecable connector, and an additive weld spanning the seam line.

In Example 33, the subject matter of Example 32 can optionally includethe shielding layer comprising a conductive foil.

In Example 34, the subject matter of Example 32 can optionally includethe shielding layer comprising a conductive foil with a polymer filmbacking.

In Example 35, the subject matter of any of Examples 32 to 34 canoptionally include the additive weld comprising a metal.

In Example 36, the subject matter of any of Examples 32 to 35 canoptionally include the cable core comprising a waveguide.

In Example 37, the subject matter of any of Examples 32 to 35 canoptionally include the cable core comprising at least one conductivewire and an insulator material.

Example 38 is an integrated circuit assembly comprising an electronicsubstrate, a cable connector electrically attached to the electronicsubstrate, a cable attached to the cable connector, wherein the cablecomprises a cable core and a shielding layer substantially surroundingthe cable core, and wherein the shielding layer is adjacent the cableconnector with a seam line defined between the shielding layer and thecable connector, and an additive weld spanning the seam line.

In Example 39, the subject matter of Example 38 can optionally includeat least one cable attached to the cable connector, wherein the additiveweld extends between the first component and the at least one cable andbetween the second component and the at least one cable.

In Example 40, the subject matter of any of Examples 38 to 39 canoptionally include the additive weld comprising a metal.

Example 41 is an integrated circuit assembly comprising an electronicboard; an electronic substrate having a first surface and an opposingsecond surface, wherein second surface of the electronic substrate is inelectrical contact with the electronic board; an integrated circuitdevice having a first surface and an opposing second surface, whereinthe first surface of the integrated circuit device is electricallyattached to the first surface of the electronic substrate; a heatdissipation device in thermal contact with the second surface of theintegrated circuit device; a side mount module comprising a side mountconnector electrically attached to the electronic board and a side mountbridge electrically attached to the side mount connector and the firstsurface of the electronic substrate; and an additive support structureextending between and fused to the heat dissipation device and the sidemount module.

In Example 42, the subject matter of Example 41 can optionally includethe additive support structure being thermally conductive.

In Example 43, the subject matter of Example 41 can optionally includethe additive support structure being a material selected from the groupconsisting of copper, silver, aluminum, and alloys thereof.

In Example 44, the subject matter of Example 41 can optionally includethe additive support structure being a material selected from the groupconsisting of diamond, silicon carbide, boron nitride, and aluminumnitride.

In Example 45, the subject matter of any of Examples 41 to 44 canoptionally include the side mount bridge comprising a passive device.

In Example 46, the subject matter of any of Examples 41 to 44 canoptionally include the side mount bridge comprising an active device.

Example 47 is an integrated circuit assembly comprising an electronicboard; an electronic substrate having a first surface and an opposingsecond surface, wherein the second surface of the electronic substrateis in electrical contact with the electronic board; an integratedcircuit device having a first surface and an opposing second surface,wherein the first surface of the integrated circuit device iselectrically attached to the first surface of the electronic substrate;a heat dissipation device in thermal contact with the second surface ofthe integrated circuit device; a side mount module comprising a sidemount connector attached to the electronic board and a side mount bridgeattached to the side mount connector and the first surface of theelectronic substrate; a data cable attached to the side mount connector;and an additive support structure extending between and fused to theheat dissipation device and the side mount module.

In Example 48, the subject matter of Example 47 can optionally includean adhesive layer between the side mount module and the electronicboard.

In Example 49, the subject matter of any of Examples 47 to 48 canoptionally include the additive support structure being thermallyconductive.

In Example 50, the subject matter of any of Example 47 to 49 canoptionally include the additive support structure being a materialselected from the group consisting of copper, silver, aluminum, andalloys thereof.

In Example 51, the subject matter of any of Examples 47 to 49 canoptionally include the additive support structure being a materialselected from the group consisting of diamond, silicon carbide, boronnitride, and aluminum nitride.

In Example 52, the subject matter of any of Examples 47 to 51 canoptionally include the side mount bridge comprising a passive device.

In Example 53, the subject matter of any of Examples 47 to 51 canoptionally include the side mount bridge comprising an active device.

Example 54 is a method of fabricating an integrated circuit assemblycomprising forming an electronic board; forming an electronic substratehaving a first surface and an opposing second surface; electricallycontacting the second surface of the electronic substrate with theelectronic board; forming an integrated circuit device having a firstsurface and an opposing second surface; electrically attaching the firstsurface of the integrated circuit device to the first surface of theelectronic substrate; forming a heat dissipation device; thermallycontacting the heat dissipation device with the second surface of theintegrated circuit device; forming a side mount module comprising a sidemount connector and a side mount bridge; attaching the side mountconnector to the electronic board; attaching the side mount bridge tothe side mount connector and the first surface of the electronicsubstrate; a data cable attached to the side mount connector; andforming an additive support structure extending between and fused to theheat dissipation device and the side mount module.

In Example 55, the subject matter of Example 54 can optionally includeforming the additive support structure comprises forming a thermallyconductive additive support structure.

In Example 56, the subject matter of any of Examples 54 to 55 canoptionally include the side mount bridge comprising a passive device.

In Example 57, the subject matter of any of Examples 54 to 55 canoptionally include the side mount bridge comprising an active device.

In Example 58, the subject matter of any of Examples 54 to 57 canoptionally include electrically attaching the side mount connector tothe electronic board.

In Example 59, the subject matter of any of Examples 54 to 58 canoptionally include attaching the side mount connector to the electronicboard with an adhesive layer.

In Example 60, the subject matter of any of Examples 54 to 59 canoptionally include attaching a data cable to the side mount connector.

Having thus described in detail embodiments of the present invention, itis understood that the invention defined by the appended claims is notto be limited by particular details set forth in the above description,as many apparent variations thereof are possible without departing fromthe spirit or scope thereof.

What is claimed is:
 1. A cable, comprising: a cable core; a shieldinglayer substantially surrounding the cable core; a seam line defined bythe shielding layer extending along a length of the cable core; and anadditive weld spanning the seam line.
 2. The cable of claim 1, whereinthe seam line is defined by a first edge of the shielding layer adjacenta second edge of the shielding layer.
 3. The cable of claim 1, whereinthe shielding layer comprises a metal.
 4. The cable of claim 1, whereinthe shielding layer comprises a conductive foil.
 5. The cable of claim1, wherein the shielding layer comprises a conductive foil with apolymer film backing.
 6. The cable of claim 1, wherein the additive weldcomprises a metal.
 7. The cable of claim 1, further comprising a coatinglayer over the shielding layer and the additive weld.
 8. The cable ofclaim 7, wherein the coating layer comprises a heat-shrink tubing. 9.The cable of claim 8, wherein the heat-shrink tubing comprisespolyolefin.
 10. The cable of claim 1, wherein the cable core comprises awaveguide.
 11. The cable of claim 1, wherein the cable core comprises atleast one conductive wire and an insulator material.
 12. An integratedcircuit assembly, comprising: an electronic substrate; a cable connectorelectrically attached to the electronic substrate; a cable attached tothe cable connector, wherein the cable comprises a cable core and ashielding layer substantially surrounding the cable core, and whereinthe shielding layer is adjacent the cable connector with a seam linebetween the shielding layer and the cable connector; and an additiveweld spanning the seam line.
 13. The integrated circuit assembly ofclaim 12, wherein the shielding layer comprises a conductive foil. 14.The integrated circuit assembly of claim 12, wherein the shielding layercomprises a conductive foil with a polymer film backing.
 15. Theintegrated circuit assembly of claim 12, wherein the additive weldcomprises a metal.
 16. The integrated circuit assembly of claim 12,wherein the cable core comprises a waveguide.
 17. The integrated circuitassembly of claim 12, wherein the cable core comprises at least oneconductive wire and an insulator material.
 18. An integrated circuitassembly, comprising: a cable connector comprising a first componentabutting a second component; a seam line between the first component andthe second component; and an additive weld spanning the seam line. 19.The integrated circuit assembly of claim 18, further comprising at leastone cable attached to the cable connector, wherein the additive weldextends between the first component and the at least one cable andbetween the second component and the at least one cable.
 20. Theintegrated circuit assembly of claim 18, wherein the additive weldcomprises a metal.